Abstract
The 2D-electron gas (2DEG) carrier density in AlGaAs-GaAs-AlGaAs Schottky-gate quantum well structures prepared by MBE has been determined from capacitance-temperature (C-T) and capacitance-voltage (C-V) characteristics. The achieved results are in remarkable agreement with the values of the 2DEG carrier density determined from simulation, Shubnikov-de Haas oscillations and quantum Hall effect (QHE) measurements.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica Status Solidi A-applications and Materials Science
Paper Title
Journal
Date
