Abstract
Investigations on Al/SiNx/pn-GaAs gated diodes reveal that the forward current IF in the recombination current region consists of a bulk current part being generated in the depletion region of the metallurgical p–n junction, and a surface recombination current part occurring at the intersection plane of this depletion region with the semiconductor surface. A variation of the gate length influences neither surface current nor HF capacitance of the p–n junction. However, the surface current can be controlled by the gate bias. A simple model using surface recombination at the junction perimeter enables evaluation of surface recombination velocity so and carrier lifetime τo in the depletion region of the p–n junction. Thus the 2kT recombination current of the gated diodes can be separated into a surface and a bulk part. This method can also be applied to other AIIIBV semiconductors.
Published Version
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