Abstract
Normal-incidence specular transmittance T_exp (?) of undoped amorphous selenium ( a -Se) films of several thicknesses (0.25-1 ?m) thermally evaporated on thick microscopic glass-slide substrates upheld at temperatures near 30 o C (below glass transition temperature of undoped Se) has been measured at room temperature in the spectral wavelength?range 300-1100 nm. Above a threshold wavelength ?_c (~ 600 nm), their as-measured T_exp (?)-? curves display transmittance values near that of glass substrates and exhibit well-resolved interference-fringe maxima and minima, signifying good uniformity of fabricated a -Se films. Below?_c, the T_exp (?)-? curves decline progressively to zero transmittance, preceded by a tailing-like trend of possible structural disorder origin. The spectral dependencies of optical constants n(?) and?(?) of the studied a -Se films on ? were retrieved from iterative curve-fitting of their T_exp (?)-? data to theoretical T_theor (?)-formulations of an air-supported {thin film/thick substrate}-stack using the O’Leary-Johnson-Lim (OJL) interband-transition dielectric model, combined with a dielectric constant , representing the dielectric background at very high photon energies (at spectral wavelengths much smaller than measured). Regardless of the number of observed interference fringes, reliable simulation to the as-measured normal-incidence T_exp (?)-? spectra has been achieved, but were remarkably curve-fitted if we presume that a thin roughness layer (<5 nm) of selenium was formed on top of the fabricated undoped a -Se films. The retrieved n(?)-? spectra display a broad peak around??0.52 ?m, below which n(?) was found to vary with wavelength in accordance with a Sellmeier-like (Wemple-DiDominco) single-oscillator (normal) dispersion formula, with a static index of refraction n(E=0)=?(?_s )?2.42, where ?_s is the static dielectric constant of the material at zero photon energy , and an oscillator “average” bandgap energy of E_o?3.93 eV?2 E_g^opt, the optical (Tauc) bandgap energy. The values of E_g^opt of studied undoped a -Se films deduced from Tauc-like plots were around 1.92 eV (± 0.02 eV) and the retrieved values of OJL band-tailing energy parameter ? (Urbach-tail parameter ?_U) was found to be in the range 40-50 meV, slightly dependent on film thickness.
Highlights
Let layer 2 in a {layer 1/layer 2/layer 3}-stack to be made from linear, isotropic, and non-magnetic material of complex index of refraction and to have finite thickness and smooth, parallel-plane surfaces
̂ formulas for light waves obliquely incident from the side of layer 3 (321-route) can be found by replacing number 1 in equation (A8) by number 3 and vice versa, viz
The other consists of a coherent thin layer 2 of thickness and an incoherent thick layer 3 of thickness (≫ ) as a dielectric or semiconducting thin film grown on a thicker transparent substrate, both of which bounded by air
Summary
Let layer 2 in a {layer 1/layer 2/layer 3}-stack to be made from linear, isotropic, and non-magnetic material of complex index of refraction. To have finite thickness and smooth, parallel-plane surfaces. If the first and third layers are semi-infinite transparent air media ≅ 1), we have a layer standing freely in air, while if layer 2 is laid on a thick and highly absorbing layer 3, so no light waves will be reflected back or come out from it, layer 3 is said to be infinite. Layer 2 may be a coherent thin film or an incoherent thick slab
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