Abstract
Crystalline properties of porous silicon layers have been studied by X-ray diffraction. The difference in lattice parameter between the silicon substrate and the porous layer and the strains of the porous lattice have been determined accurately on a double crystal diffractometer for a series of porous structures. The results show that the porous silicon lattice is expanded with respect to the substrate and that the expansion increases with porosity. The combination of these data with measurements of the curvature has enabled the elastic constants for different porous structures to be derived.
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