Abstract
A determination of the lattice parametersa∥ andb∥ of InAs/AlAs short-period strained-layer superlattices grown by Atomic Layer Molecular Beam Epitaxy (ALMBE) on GaAs(001) substrates has been performed by means of an X-ray precession camera using copper radiation. Spots belonging to the superlattice are clearly differentiated from those of the substrate, which confirms that they are partly decoupled from each other. It was also possible to resolve the lattice spots of InAs or In0.8Ga0.2 As decoupling buffer layers grown between the substrate and the superlattice. This technique proves to be very useful to characterize, in a very short time and with a reasonable resolution, highly mismatched epitaxial systems in which lattice parameters parallel to the interface play a crucial role in the understanding of the growing behaviour.
Published Version
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