Abstract
Nonparabolic effective mass of conduction subbands in InGaAs/InAlAs quantum wells (QWs), lattice-matched to InP, was quantitatively obtained by analyzing interband-optical transition spectra. Thickness of InGaAs well was 5.3, 9.4, and 20.8 nm . Thickness of InAlAs barrier was about 10 nm , and each QW was independent. Excellent agreement was obtained between experimental mass and theoretical mass predicted by Kane's three-level band theory on bulk InGaAs, in a wide energy range of 0.5 eV from the bandedge. Method of experimental analysis on a relation between eigen energy and effective mass was described.
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