Determination of dV/dt and dI/dt characteristics for high voltage 4H-SiC Schottky diodes with different types of metal-polymeric packages

Abstract

The dV/dt and dI/dt characteristics for 4H-SiC Schottky type diodes with different type metal-polymeric packages have been studied experimentally. It is determined that experimental dV/dt values for 4H-SiC Schottky type diodes in large-sized and small-sized metal-polymeric packages type (TO-220, SOT-89, QFN, PQFN) are varying in interval of 753÷1087 V/ns. For the first for time 4H-SiC Schottky type diodes have been determined experimentally another important diode’s characteristics dI/dt which are varying in interval of 1.91÷4.00 A/ns for all diodes It is established that package’s size miniaturization not lead to characteristics degradation (dV/dt and dI/dt) during of impulse mode of operation that is positive factor for the for diode failure-free operation during of impulse mode.