Abstract
In AlN, several broad defect-related photoluminescence bands in the range from 1.6 eV to 2.4 eV have been observed and were associated with donor or DX– to deep electron trap transitions. By the variation of the length of sub-bandgap laser excitation pulses, we find remarkable changes in the wavelength and intensity of the photoluminescence band at 2.4 eV. Purely based on photoluminescence experiments with variable pulsed excitation, we can determine the capture cross sections for the capture of free electrons into the initial D+ and D0 states and the photon absorption cross section for the excitation of the deep electron trap.
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