Abstract
Annealing induced interface and bulk effects in thin Cr2O3 films on aluminum oxide have been studied. The investigated samples have been prepared by reactive r.f. magnetron sputter deposition of Cr2O3 on ceramic Al2O3 substrates. Annealing at temperatures up to 1250° C have been carried out in situ under ultra high vacuum. Temperature induced compositional changes have been subsequently determined by AES sputter depth profiling without breaking the vacuum. The non-conducting substrates and the overlap of the Cr-(LMM)- and O-(KLL)-Auger peaks required special analysis parameters and spectra interpretation to obtain the concentration depth profiles of the different elements (Al, O, Cr).
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