Abstract
We review differential reflectance (DR) spectroscopy, an optical technique that can be used to detect damage in semiconductors in a broad range of defect densities. In this study, we focus on the determination of the depth distribution of damage in ion-implanted semiconductors using DR. We give details about the method and discuss experimental results involving ion-implanted GaAs and Si under various conditions. We compare the experimentally determined damage profiles with calculations and show that there is very good agreement between the experiments and the theory.
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