Abstract
An Au/Carmine/ n-Si Schottky device was fabricated and the current–voltage ( I–V) and the capacitance–voltage/frequency characteristics of the structure have been measured at room temperature. A good rectifying behavior was seen from the I–V characteristics. The characteristic parameters of the structure such as barrier height, ideality factor, interface states density and series resistance were determined from the electrical measurements. Also, Cheung functions and Norde method were used to evaluate the I–V characteristics and to obtain the characteristic parameters of the Schottky contact. It was seen from the capacitance measurements that the values of capacitance were almost independent of frequency up to a certain value of frequency whereas at high frequencies the capacitance decreased quickly. The higher values of capacitance at low frequencies were attributed to interface states and the excess capacitance resulting from the interface states in equilibrium with the Si that can follow the alternating current signal.
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