Determination of complex dielectric functions at HfO2/Si interface by using STEM-VEELS

Abstract

The complex dielectric functions and refractive index of atomic layer deposited HfO2 were determined by the line scan method of the valence electron energy loss spectrum (VEELS) in a scanning transmission electron microscope (STEM). The complex dielectric functions and dielectric constant of monoclinic HfO2 were calculated by the density functional theory (DFT) method. The resulting two dielectric functions were relatively well matched. On the other hand, the refractive index of HfO2 was measured as 2.18 by VEELS analysis and 2.1 by DFT calculation. The electronic structure of HfO2 was revealed by the comparison of the inter-band transition strength, obtained by STEM-VEELS, with the density of states (DOS) calculated by DFT calculation.