Abstract
AbstractWe report on a contactless, all‐optical study of carrier diffusion and recombination kinetics in single‐crystalline diamond layers using the light‐induced transient grating (LITG) technique. Decay times of transient diffraction grating yielded carrier lifetime of τR ≈ 3 ns and bipolar diffusion coefficient Da = 12 cm2/s at 300 K. The latter value of Da was found to be 4–5 times lower than the ambipolar diffusivity based on electron and hole mobilities, measured by photo‐electrical time‐of‐flight (ToF) technique. This discrepancy was attributed to the bandgap renormalization at high excess carrier densities and its impact on carrier diffusion. The significant decrease of low temperature diffusivity pointed out to a contribution of many‐body effects which are tentatively attributed to the formation of electron–hole liquid (EHL) at T < 150 K.
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