Abstract
A promising approach is presented to characterize the carrier density in Te-doped Bi nanowires from their temperature-dependent resistance measurements, based on the comparison of the scattering rates due to charged impurity scattering and due to other scattering mechanisms that are independent of the carrier density. The result shows that the Te doping efficiency δe is only about 10%–15% for Te-doped Bi nanowires synthesized in an alumina template by molten-metal pressure injection. This analysis technique can be extended to other nanowire systems to provide valuable information regarding the carrier concentration and the Fermi energy for use in controlling and optimizing nanowire properties for specific applications.
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