Abstract
Surface-sensitive core levels are measured with synchroton radiation photoelectron spectroscopy (SRPES) to determine bonding properties at the epitaxial CaF 2/GaAs interface. It is found that Ca bonds to As at the interface, and that the dissociation reaction of CaF 2 takes place only on the GaAs(100) substrate. A structural model with a non-abrupt CaF 2/GaAs(100) interface is proposed based on these SRPES results. Differences in interfacial bonding properties between GaAs(100), (110), and (111) substrates are also discussed.
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