Abstract
Borophosphosilicate glass (BPSG) has been used for its improved reflow properties compared to low temperature oxide (LTO) in planar technology. Thin films of BPSG were deposited by a low-pressure chemical vapor deposition process. The boron content was determined by NDP. In addition from the NDP spectrum the depth profile of boron and the thickness of the film were also determined. In the NDP technique, samples, typically silicon wafers with 500 nm thick BPSG film, were exposed to a highly-thermalized neutron beam. Generated by the10B(n,α)7 Li reaction, isotropically emitted monoenergetic α particles of 1.47 MeV were counted in an evacuated in-beam analysis setup. The energy loss of the α-articles in the film was proportional to the depth at which the nuclear reaction took place. The energy spectrum of the α-articles, therefore, was a direct result of the boron depth profile, and the area under the curve was a measure of the total number of boron atoms in the film. This unique nuclear technique provided an excellent method for optimizing the composition of the BPSG film for device processing.
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