Abstract
The article is devoted to the method of approximating the dependence of semiconductor devices' transient thermal impedance characteristics which makes it possible to obtain a solution to refine the electro-thermal model minimum structure based on the iterative least squares method using the Levenberg-Marquardt algorithm, as well as time-constant spectrum graph. An experiment to approximate the dependence of the transient thermal impedance characteristics of high-frequency switching voltage converter microcircuits was carried out and its results were presented. This approach allowed us to reduce the filtration factor influence in the deconvolution operation when building a thermal model using the transient thermal characteristic structural function. The research results can be applied for multidisciplinary behavioral modeling of electronic semiconductor devices.
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