Abstract
The angular dependences of the lateral growth rate are determined as the functions of growth temperature and growth time in liquid phase epitaxy of (0 0 1) InP at low growth temperature of 330–450°C. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has a strong anisotropy in [1 1 0] direction especially at low growth temperature ( T g<400°C). This indicated that kink density was high in [1 1 0] direction on InP (0 0 1) surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
