Abstract
A method has been developed for the analysis of trace impurities in high purity gallium at nanogram level. The gallium is separated from the trace elements by partial dissolution and by solvent extraction as HGaCl4 complex from 7N HCl with di-isopropyl ether. The aqueous phase containing the impurities is evaporated almost to dryness after adding 1 ml of 0.1N H2SO4, made up to 1 ml with 0.1N HCl and then analysed by atomic absorption spectrometry using electrothermal atomization. The limits of detection for the impurities lie in the range of 0.5 ng/g to 10 ng/g and the coefficient of variation varies from 1 to 5% at 50 ng/g level. The percentage recoveries for all the impurities are in the range 95–100%.
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