Abstract
A study of the tensoresistance and tenso-Hall effect for the neutron-doped silicon single crystals after high-temperature annealing was conducted. It was established that the features of tensoeffects for these n−Si single crystals are caused by the change under the uniaxial deformation of the activation energy of the deep levels of thermodonors, which belong to different of their charge states. Dependencies of the activation energy of thermodonors on the uniaxial pressure based on the solutions of the electroneutrality equations were obtained. The obtained tensosensitivity for the neutron-doped n−Si single crystals due to the ionization of the deep level of the thermodonor E=EC−257meV at the uniaxial pressures P>0.7GPa can find its practical use in the development of high uniaxial pressure sensors based on such silicon single crystals.
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