Abstract
A procedure is presented for the determination of physical parameters of planar double-diffused transistors from measured terminal data of electrical performance. It is first shown that a model of the impurity density profile of the device consisting basically of two exponentials is capable of approximating closely to double-Gaussian and double erfc distributions. The properties of junction capacitance, base transit time and I c - V eb are analyzed for devices characterized by such a model and measured data for these properties are then utilized for the purpose of deducing the physical defining parameters of the model itself. The process of parameter determination is carried out by an iterative procedure on a digital computer. Results are presented for a range of planar silicon devices having electrical base widths down to 1 μ (base transit times down to 0·3 nsec).
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