Deterioration Of Short Channel Effects In Dual Halo Based Triple Material Surrounding Gate (Dh-Tmsg) Mosfet

B.R Sathish Kumar

doi:10.5121/ijist.2014.4304

Abstract

In the proposed work, the analytical model for Surface potential and Electric field has been carried out in a novel structure named dual halo triple material Surrounding-gate metal-oxide-semiconductor field effect transistor (DHTMSG). The new device has been incorporated with symmetrical dual halo regions near source and drain ends, while the gate terminal consists of three different metals with different work functions. The results prove that the device significantly deteriorates the short channel effects which are studied by analytical model for surface potential and electric field using parabolic approximation method. The analytical results are endorsed by the simulation results.

Highlights

As the device dimensions have been diminishing, the parameters of MOSFET needs better scrutiny to achieve high packing density, high speed and better performance
The performance of the dual halo triple material surrounding gate (DH-TMSG) MOSFET is studied by analyzing the surface potential
The surface potential distribution of DHTMSG structure acts as Y-axis and the X-axis denotes the distance from source which is plotted in figure2

Summary

INTRODUCTION

As the device dimensions have been diminishing, the parameters of MOSFET needs better scrutiny to achieve high packing density, high speed and better performance. Short Channel Effects (SCE) is the major hindrance which deteriorates the performance of conventional MOSFETs. During the application of high voltage near drain, the channel tends to pinch off due to the expansion of depletion region between drain and body. During the application of high voltage near drain, the channel tends to pinch off due to the expansion of depletion region between drain and body This intrudes inside the inversion region which gives rise to one of the SCE, Drain Induced Barrier Lowering (DIBL) which in turn increases the non-linearity between the drain current and gate to source voltage. Due to the formation of pinch off region, there exists a high electric field near the drain region which leads to Hot-Carrier Effect This electric field powers the electrons inside the channel region that tends to isolate the gate and inversion region which gives rise to trapping of static charge inside the insulating structure. This work has been extended by replacing three gate materials [9] along with pocket implants [11, 12] which introduces a novel structure, dual halo triple material surrounding gate (DH-TMSG) MOSFET

MODEL FORMULATION

RESULTS AND DISCUSSIONS

CONCLUSION