Abstract
We performed Low‐Frequency Noise (LFN) measurements on vias between multilayered metallizations biased at current densities of 5.3×105≤J≤3.3×106 A/cm2 at different ambient temperatures up to 200 °C. The vias were between two metallization levels each composed of Ti:W barrier layer and 1% Si, 0.5% Cu doped Al. We observed 1/fγ spectra in the frequency range of 500 mHz and 50 Hz where γ was between 0.95 and 1.15. γ was found to have no dependence on temperature and current density. The noise magnitude, on the other hand showed a quadratic dependence on applied current. The activation energy extracted from the Arrhenius plot of the voltage noise power spectrum at 10 Hz was 0.11 eV, which was much lower than the values measured by the conventional mean‐time‐to‐failure techniques (∼0.7 eV). However, these values agreed with the activation energies obtained for multilayered thin films using LFN measurements. Both the noise magnitude and the activation energy were found to be independent of the direction of electron flow. Only for J≥2.6×106 A/cm2 and Tambient≥180 °C, the noise magnitude for electron flow out of the via was greater than that for the electron flow into the via.
Published Version
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