Abstract
The traps in ZnSe epitaxial layers grown on (111) ZnSe substrates were investigated by photocapacitance and deep level transient spectroscopy (DLTS) methods. The photocapacitance study showed a donor trap at 0.14 eV and two acceptor traps at 0.57 and 0.10 eV, which were identified as a self-activated center and a Na or Li acceptor, respectively. The DLTS study elucidated a 0.32 eV trap in a P-doped sample and a 0.30 eV trap in an undoped sample, which seems to be due to a Se vacancy. Traps were found also at 0.15, 0.29 and 0.52 eV in a Ga-doped sample. The DLTS spectra of the first two traps changed markedly under the light irradiation.
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