Abstract
An experimental study has been made of the detection of structural defects in n‐type crystals by electrochemical etching under illumination. Under illumination, presence of structural defects such as mechanical damage or grown‐in defects on the crystal surface led to a decrease of dissolution rate of the surface. This enabled structural defects to be revealed as etch hillocks. Surface damage introduced during handling processes of the crystal was detected with high sensitivity. By observing etch hillocks, detailed information was obtained regarding fine structure and distribution of dislocations or dislocation clusters in nominally undoped crystals. It was found that novel defects, which were not involved in nominally undoped crystals , were involved in highly sulfur‐doped crystals with low dislocation densities .
Published Version
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