Abstract
We constructed the new method to analyze thermally stimulated current (TSC) using maximum entropy method. This method allows us to extract trap density depending on trap energy level [Nt(Et)] from a TSC curve. Using this to analyze TSC of as-deposited, nitrided, and reoxidized thin silicon dioxide films, we were able to determine Nt(Et) of hole traps with very highly energy resolution and to observe the generation of nitrogen related hole traps.
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