Abstract
Current induced magnetic field over a metal nanostructure was investigated by using magnetic force microscopy (MFM) to discuss the spatial resolution and the detection current limit in measuring current distribution in a polycrystalline-Si (poly-Si) layer of thin film transistors. It was found that the detection current limit depended on the MFM probe height, which is a separation between the tip and the surface. The optimum probe height for detecting the smallest current avoiding the effect of topography was 16 nm. The detection current limit at the probe height of 16 nm was 29 μA. This technique should be applicable for detecting current distribution in the poly-Si layer.
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