Detection of In-P and In-Sb atom pairs by perturbed angular correlation in silicon

Abstract

We report the observation of In-P and In-Sb atom pairs in Si using the perturbed γγ angular correlation technique with 111In as radioactive probe atoms. The pairs are characterized by νQ=179(1) MHz and 271(1) MHz, respectively, and their electric field gradient tensors are axially symmetric about a 〈111〉 lattice direction. The results suggest a strong interaction between acceptor and donor atoms in elemental semiconductors like Si and Ge.