Abstract
The local lattice environment of the donor In in CdS is investigated measuring the electric-field gradient at the site of the radioactive probe atom 111In by the perturbed γγ angular correlation technique. It is shown that implantation of In into CdS with subsequent annealing drives 100% of the In atoms to Cd lattice sites. Diffusion of In into CdS under S overpressure results in the formation of In Cd-V Cd pairs which seem to be responsible for the self-compensation of In donors in CdS.
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