Abstract
Si (n-type. 0.11 Ω cm) was implanted either with radioactive 111In or natural 115In atoms. The annealing behaviour and defect trapping at the 111In site was studied during isochronal annealing by means of the perturbed γ-γ angular correlation technique (PAC). Amorphisation and recrystallisation were controlled by RBS as a function of the implantation dose and the annealing temperature and were monitored by RBS.
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