Abstract
The particle detector based on a high purity epitaxial layer of 4H–SiC exhibits promising properties in detection of various types of ionizing radiation. Due to the wide band gap of 4H–SiC semiconductor material, the detector can reliably operate at room and also elevated temperatures. In this work we focused on detection of fast neutrons generated the by D–T (deuterium–tritium) nuclear reaction. The epitaxial layer with a thickness of 105 [Formula: see text]m was used as a detection part. A circular Schottky contact of a Au/Ni double layer was evaporated on both sides of the detector material. The detector structure was characterized by current-voltage and capacitance-voltage measurements, at first. The results show very low current density (<0.1 nA/cm[Formula: see text] at room temperature and good homogeneity of free carrier concentration in the investigated depth. The fabricated detectors were tested for detection of fast neutrons generated by the D–T reaction. The energies of detected fast neutrons varied from 16.0 MeV to 18.3 MeV according to the acceleration potential of deuterons, which increased from 600 kV up to 2 MV. Detection of fast neutrons in the SiC detector is caused by the elastic and inelastic scattering on the silicon or carbide component of the detector material. Another possibility that increases the detection efficiency is the use of a conversion layer. In our measurements, we glued a HDPE (high density polyethylene) conversion layer on the detector Schottky contact to transform fast neutrons to protons. Hydrogen atoms contained in the conversion layer have a high probability of interaction with neutrons through elastic scattering. Secondary generated protons flying to the detector can be easily detected. The detection properties of detectors with and without the HDPE conversion layer were compared.
Highlights
Silicon carbide (SiC) is a promising material for high-temperature electronics, highfrequency devices, and radiation-resistant electronics
We have examined 4H–SiC detectors using a fast neutron source and studied their detection properties
The detection efficiency can be increased by using the HDPE conversion layer, which should be glued on the Schottky contact of the detector
Summary
Silicon carbide (SiC) is a promising material for high-temperature electronics, highfrequency devices, and radiation-resistant electronics. Detectors based on the 4H–SiC epitaxial layer can attain high quality X-ray spectroscopic data at room as well as at increased temperatures. In studies using -particles, detectors achieve 100 % CCE, diffusion length of holes up to 13 m, and energy resolution 0.38 % (FWHM) for an optimized detector in terms of material and contact thickness.[10] SiC detectors can be utilized for detection of neutrons, using a converter layer of 6LiF and 10B for thermal neutrons, while HDPE (High Density Polyethylene) increases the detection efficiency of fast neutrons. The detection efficiency can be increased using an HDPE converter layer transforming fast neutrons to protons.[12]. We have examined 4H–SiC detectors using a fast neutron source and studied their detection properties. The detection properties of 4H–SiC detectors were evaluated considering the use of the HDPE conversion layer and the thickness of the active detector volume modified by the detector reverse voltage (100 to 400 V)
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