Abstract
We have investigated the effect of the uniaxial strain on the binding energy of valence band top, Si 1s and Ge 2p core level by Hard X-ray Photoemission Spectroscopy (HXPES) with the high spatial resolution. By combining HXPES with the high spatial resolution using K-B mirrors and uniaxially strained SiGe samples fabricated by selective ion-implantation, we succeeded in observation of the effect of uniaxial strain on the valence band structure. We have found that the energy difference between Ge 2p and valence band top in the case of uniaxial strain is smaller than that in the case of biaxial strain.
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