Abstract
Designed DNA templates were anchored onto the surface of Si nanowire (SiNW) FETs. Then base pair (BP) extension reactions were performed on the DNA templates. The charges of newly formed BPs induced shifts of device Id-Vg curves. Vg shifts linearly with the number of BPs with a strong signal of ∼10 mV/BP, indicating a great potential for DNA sequencing by detecting intrinsic charges of DNA backbones.
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