Abstract
Lifetimes of minority carriers in semiconductors are very important parameters for devices, especially for solar cells. For germanium and silicon, it was discovered that the actually measured lifetimes were by orders of magnitude smaller than the theoretical limit, which can be deduced from the principle of detailed balance of black-body radiative absorption and emission. The thermodynamic limit of solar cell efficiency was also derived based on this principle. The development of solar cells with silicon and its non-ideal junction behavior are reviewed. The contemporary suggested trends to overcome this detailed balance limit are being discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
