Abstract
This letter discusses electrical components on a silicon-on-insulator (SOI) wafer employing the AC pseudo-metal-oxide-semiconductor (MOS) method, following the removal of contact resistance between metal probes and the SOI layer of the wafer. This study attempts to clarify that the contact resistance between the back surface of the wafer and measurement chuck exerts a substantial impact on the repeatability of AC measurement results. By utilizing a wafer that has a metal layer deposited on its back surface, an additional resistance component is observed in the intermediate frequency range of the measured impedance. This phenomenon may be attributed to the bulk conduction of the carriers in the SOI layer.
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