Abstract
A vertical directional solidification (VDS) technique is used to grow GaSb bulk single crystals without seed and without contact to ampoule wall. We have designed and fabricated furnace with special axial and radial temperature gradients with optimized growth parameters. The goal is to develop gap for growing crystal, therefore a tiny melt is lowered down from hot zone for constricted solidification. As grown GaSb crystals have been characterized for the macro and micro growth features of ingots. Physical and electrophysical properties of GaSb studied to know the enhancement in crystallography and crystal quality. The detached growth is possible due to the appropriate gap developed in between the solidifying melt and the wall of the ampoule. For typical detached ingots, growth reveal high quality bulk single crystals with mobility p-GaSb = 1060 cm 2 /Vsec at 300K. In VDS, detached solidification is
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