Abstract
Thin SimGen superlattices (SLs) have been implanted with dopant and neutral ions and annealed at low temperature (600 °C) during a short time (30 min). Intermixing between the two species takes place when the SL has been rendered amorphous. This effect is due to disorder only and no dopant impurity influence could be seen in contrast to the case of III–V SLs.
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