Abstract
The aim of this work is to investigate the influence of charged particles on the growth of ZnO:Al-films. By variation of the substrate potential the flux of these particles is changed. The ion energy distributions for different substrate voltages have been measured with a commercial plasma monitoring system (PPM421). Furthermore the plasma has been characterized with a planar probe. The deposited films were analysed by Rutherford back scattering spectroscopy (stoichiometry, thickness) and by optical spectroscopy. We have observed that the deposition rate and the stoichiometry of the ZnO:Al-films depend strongly on the applied substrate voltage and therefore on the flux of charged particles. The electrons especially affect the film growth by a thermal heating of the substrates. They cause a preferred desorption of zinc atoms and lead to an increase of the Al/Zn and oxygen/metal ratio. Our experiments show that the flux of charged particles is one of the most important parameters controlling the film growth. Especially if the voltage drop in the sheath is small (about 20 V) the bombardment of electrons is the main parameter.
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