Designing sub-5 nm monolayer AlP MOSFETs

Abstract

Two dimensional (2D) materials have appealed to great interest for microelectronics in developing the next era of metal-oxide-semiconductor field-effect transistors (MOSFETs). 2D aluminum phosphorous (AlP) with constancy under ambient settings is a suitable channel material for the next MOSFET era. Based on the ab initio quantum transport simulation, we investigate the device performance of the n and p-type sub-5 nm monolayer (ML) AlP MOSFETs. The ML AlP MOSFETs could be satisfied the International Technology Roadmap for Semiconductors (ITRS) standard 2028 by their optimal parameters; on-state current (Ion), delay time (τ), and power dissipation (PDP) for the high-performance (HP)/low-power (LP) devices even after the gate length is lowered to 4/5 nm for n-type and 3/5 for p-type respectively. As a result, AlP is a channel candidate that could be considered for use in the next era of MOSFETs.