Designable graphitic N composite of N doped graphene oxide via low temperature O3-annealing for bisphenol A electrocatalytic degradation

Abstract

Nitrogen atom doping can effectively improve the electrocatalytic performance of graphene materials, and different nitrogen species play various roles. At present, high calcination temperature is commonly used to promote the production of graphitic N. To realize the oriented low-temperature doping of nitrogen atoms in graphene structure, we used O3-annealing method in this study to successfully prepare high-content graphitic N doped graphene oxide at 200 °C. Characterization results revealed that O3-annealing method can effectively promote the doping of N and O atoms. In addition, O3-annealing creating large amount defects for graphene, which directionally promoted the formation of graphitic N (reach 96.82%), which positively affected the improvement of material electrocatalytic properties. The results of bisphenol A (BPA) electrocatalytic degradation by O3-5 min-60 °C NGO showed that the degradation efficiency of BPA can reach 100% in 50 min under optimal conditions. The main active substances, namely O2− and 1O2 were probably generated from the edge oxygen functional groups (O-C=O and C=O) of the materials. BPA underwent a series of reactions, and was finally mineralized to CO2 and H2O. This study provides a new strategy for the directional preparation of high content graphitic N doped graphene oxide for practical application.