Abstract
Silicon Controlled Rectifier (SCR) devices fabricated in a SiGe BiCMOS technology are optimized for Charged Device Model (CDM) Electrostatic Discharge (ESD) protection. This optimization involves combined experimental and Technology Computer Aided Design (TCAD) ESD simulation analysis of the quasi-static current–voltage and transient response characteristics during fast stress conditions. The underlying physical mechanisms critical to the device design are demonstrated based on very fast transmission line pulsing (VFTLP) measurement and physics-based simulation results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
