Abstract
The potential of an Si/SiGe heterostructure mixed tunnelling avalanche transit time double drift region (DDR) with an SiGe layer on the p side alone is investigated. Our results indicate that this newly proposed structure has better mm wave properties and lower noise than the Si homostructure diode and Si/SiGe heterostructure diode with an SiGe layer on both n and p sides. Further, our results show that the diode properties are optimized for a particular width of the SiGe layer in the single-sided Si/SiGe heterostructure DDR.
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