Design of Voltage Level Shifter Using CNTFET and Analysis of Process Voltage Temperature Variation

Abstract

In this work, we have presented the design of voltage level shifter using carbon nanotube field effect transistors (CNTFETs). The proposed design is capable of converting two input voltage levels to two output voltage levels. The threshold voltage of CNTFETs is suitably chosen to achieve the desired output. The proposed design can perform both up and down shifting which is very useful in the system-on-a-chip design to interface with other peripherals. It exhibits lower delay and power delay product in comparison with the existing complementary metal–oxide–semiconductor-based voltage level shifters. The proposed circuit is very effective as it eliminates the requirement of additional voltage level shifter for designing systems with multi-power supply voltage domain in the nanoscale regime. The design has been analyzed for different process, voltage and temperature corners. It has been shown that the design works perfectly with [Formula: see text] variation in the diameter of the carbon nanotubes used in the CNTFET. The performance varies slightly with [Formula: see text] variation in operating voltage. Our analysis shows that the design is thermally stable for a wide variation in operating temperature.