Design of Versatile Top‐Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi‐Supporting Layers Toward All‐Transfer Transition Metal Dichalcogenide Material Based Transistor Arrays

Abstract

A top‐down transfer process is developed via a rolling process associated with thermal release tape/poly(methyl methacrylate) (PMMA) bi‐supporting layers to realize large‐scale transfer processes on transition metal dichalcogenide materials. A 2‐inch MoS2 thin film transferred on SiO2/Si substrates with high integrity and a yield of ≈99% can be successfully achieved via the proposed process. MoS2‐based transistors with a transferred Au thin film as the contact electrode indicate a lower contact resistance of 8.4 kΩ with improved mobility and a higher on/off ratio compared with that of the MoS2‐based transistors with the evaporated Au thin film as the contact electrode. By applying the difference in adhesion force between metal oxides and metal on MoS2 and PMMA surfaces, the selective transfer of MoS2 films can be demonstrated. Furthermore, all‐transferred MoS2‐based transistor arrays are demonstrated by combining the selectively transferred MoS2 film as the channel material and the transferred Au thin films as the contact electrode, which results in uniform electrical properties featuring a carrier mobility of 10.45 cm2 V−1 s−1, a subthreshold swing of 203.94 mV dec−1, a normalized Ion of 8.3 μA μm−1, and an on/off ratio of 105.