Design of UWB CMOS LNA based on current-reused topology and forward body-bias for high figure of merit

Abstract

This paper presents an UWB low noise amplifier (LNA) based on current reused and forward body-bias topology to achieve high figure of merit. The circuit was fabricated in a TSMC 0.18 μm CMOS process. The implemented LNA has a peak gain of 14.8 dB, the input reflection coefficient S11 is lower than -11.5 dB, and the output reflection S22 is lower than -10.7 dB, the minimum of the noise figure is 3.5 dB and the measurement of IIP3 is -13 dBm. It consumes 7.8mW power consumption from 1.1-V supply voltage. The figure of merit is 13.02.