Design of low voltage low power dual-band LNA with forward body biasing technique

Abstract

A low voltage, low power dual band Low Noise Amplifier (LNA) is presented in this paper. By employing a forward body bias of the MOSFET and current reuse topology the LNA can be operated at reduced supply voltage and power consumption while maintaining high gain due to its topology. Using 0.18 um CMOS process the LNA is designed at 2.4 GHz and 5.2 GHz with 13.1 dB and 14.2 dB voltage gains and 2.9 dB and 2.6 dB NF respectively with 0.7 V supply voltage and 3 mW power consumption.