Abstract
We have successfully designed single-flux-quantum (SFQ) universal gates with a wide operating margin. We have previously presented universal gates such as NAND and NOR gates. These universal gates have a small operating margin and should be optimized to realize a wide operating margin. In this study, we newly designed universal gates and optimized the device parameters using an SFQ circuit-optimizing tool. Assuming a 1 kA cm−2 Nb/Al–AlOx/Nb junction technology, the newly designed NAND and NOR gates had a critical margin of more than ±20% for 20 GHz operation. Direct-current bias margins for NAND and NOR gates were also exceeded by ±30% for 20 GHz operation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
