Design of ring oscillator with temperature compensation effect

Abstract

In this article, a ring oscillator with Temperature Compensation Effect is proposed in 0.18 μm CMOS. The ring oscillator is composed of 31 stages of inverters in series. The change in ambient temperature will cause the oscillator frequency to deviate. Therefore, this research uses a voltage circuit with a positive temperature coefficient as the power supply for the oscillator circuit, so that the ring oscillator can output stable oscillation center frequency regardless of ambient temperature. The ring oscillator has been verified by simulation and experimental testing. The ambient temperature is within the range of −40°C to 80°C. The output frequency of the ring oscillator is stable at 33 kHz ± 0.50 kHz. The frequency error is within 1.6%. Temperature stability was 120 ppm/°C. At 1 MHz off the carrier, the phase noise is as low as −151.2 dBc/Hz and the total power dissipation is 210 μW. Compared with the previous scheme, the chip area and power consumption are lower. This circuit module can provide a clock signal for the timer when the UWB chip sleeps.