Abstract
An automated technique is presented for the computation of the doping profiles that minimize the intrinsic fluctuations of various parameters induced by random doping fluctuations in semiconductor devices. The technique is based on the computation of the doping sensitivity functions of the parameters under consideration and the constrained minimization of the standard deviation of fluctuations by using the Lagrange multipliers technique. The technique is then applied to the minimization of the random doping induced fluctuations of the threshold voltage in 40-nm channel length MOSFET device.
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