Abstract
A novel gain medium consisting of direct bandgap semiconductor quantum dots (QDs) embedded in a short-period superlattice of indirect bandgap as barrier material is proposed to produce QD lasers with extremely small linewidth enhancement factor /spl alpha/. Our analysis has shown that at least one order-of-magnitude reduction in /spl alpha/ can be achieved at room temperature compared to that of similar QDs embedded in direct-bandgap barriers, making low chirp, narrow linewidth semiconductor lasers feasible.
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